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QL85O6S-A/B/C/L
Part Name：QL85O6S-A/B/C/L 850nm 100mW Semiconductor laser di
Part No：QL85O6S-A/B/C/L
Wavelength：850nm
IOP：125mA
Optical Power：100mW
Part Package：TO-18 (φ5.6mm)
- sensor - industrial light module - 3D action recognition
SPECIFICATION： Know
¨OVERVIEW
QL85O6S-A/B/C/L is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 100mW for industrial optical module
and sensor applications.
¨APPLICATION
- Sensor
- Industrial Optical Module
¨FEATURES
- Visible Light Output : lp = 850 nm
- Optical Power Output : 100mW CW
- Package Type : TO-18 (5.6mmf)
- Built-in Photo Diode for Monitoring Laser Diode
