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Contact Person :James
QL85J6S-A/B/C-E
Part Name：QL85J6S-A/B/C-E 850nm 40mW Semiconductor laser dio
Part No：QL85J6S-A/B/C-E
Wavelength：850nm
IOP：95mA
Optical Power：40mW
Part Package：TO-18 (φ5.6mm)
- sensor - industrial light module - 3D action recognition
SPECIFICATION： Know
♦OVERVIEW
QL85J6S-A/B/C-L is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 40mW for industrial optical module
and sensor applications.
♦APPLICATION
- Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 850 nm
- Optical Power Output : 40mW CW
- Package Type : TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
