QSI Laser DiodeLG UVLEDLG White LED English中文    Dec 11,2018
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PRODUCT
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QL83O6S-A/B/C 830nm 100mW Semiconductor laser diod

QL83O6S-A/B/C

Part Name:QL83O6S-A/B/C 830nm 100mW Semiconductor laser diod

Part No:QL83O6S-A/B/C

Wavelength:830nm

IOP:185mA

Optical Power:100mW

Part Package:TO-18 (φ5.6mm)

APPLICATION

- sensors - industrial light module - 3D action recognition

SPECIFICATION

SPECIFICATION: Know

PRODUCT DETAILS

♦OVERVIEW
QL83O6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 100mW for industrial optical module
and sensor applications.
♦APPLICATION
- Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Power Output : 100mW CW
- Package Type : TO-18 (5.6mmφ)

- Built-in Photo Diode for Monitoring Laser Diode



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