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Contact Person :James
QL83I6S-A/B/C
Part Name:QL83I6S-A/B/C 830nm 30mW Laser Diode
Part No:QL83I6S-A/B/C
Wavelength:830nm
IOP:55mA
Optical Power:30mW
Part Package:TO-18 (φ5.6mm)
- sensors - industrial light module - 3D action recognition
SPECIFICATION: Know
♦OVERVIEW
QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 30mW for industrial optical module
and sensor applications.
♦APPLICATION
- Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Power Output : 30mW CW
- Package Type : TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode