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Contact Person :James
QL83F6S-A/B/C
Part Name:QL83F6S-A/B/C 830nm 10mW QSI Laser Diode
Part No:QL83F6S-A/B/C
Wavelength:830nm
IOP:30mA
Optical Power:10mW
Part Package:TO-18 (φ5.6mm)
- sensors - industrial light module - 3D action recognition
SPECIFICATION: Know
¨OVERVIEW
QL83F6S-A/B/C is a MOCVD grown 830nm band GaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 10mW for Medical applications.
¨APPLICATION
- Medical applications, IR Sensor
¨FEATURES
- Visible Light Output : lp = 830 nm
- Optical Power Output : 10mW CW
- Package Type : TO-18 (5.6mmf)
- Built-in Photo Diode for Monitoring Laser Diode