- ◆ material
- ALN TEMPLATE
- GAN TEMPLATE
- ◆ Epitaxial wafer
- 硅基2'' 4'' 6'' LED外延
- AlGan基 2'' 4'' LED外延
- ◆ LED/CHIP
- 3535 UVCLED
- 4545UVCLED
- 3535 UVBLED
- 4545UVBLED
- VCSEL/EEL芯片
- SMD贴片
- ◆ Laser
- 635nm
- 650nm
- 395nm
- 670nm
- 680nm
- 780nm
- 808nm
- 850nm
- 830nm
- 905nm
- ◆ Sharp Laser series
- 385nm
- 395nm
- 405nm
- 425nm
- 395-414nm
- 430-450nm
- 435nm
- 440nm
- 450nm
- 480nm
- 487nm
- 505nm
- 515nm
- 518nm
- 520nm
- 525nm
- 638nm
- 639nm
- 640nm
- 660nm
- 661nm
- 780nm
- ◆ OSRAM laser series
- 405nm
- 445nm
- 450nm
- 510nm
- 520nm
- ◆ Device
- TES MOCVD
- 一秒光杀菌产品
- 点光源
- 面光源
Address：7th Floor, Gaofeng Building, Dalang Street, Longhua District, Shenzhen
Website：www.longstartech.com.cn
TEL：0755-2556 9680
FAX：0755-2556 6650
Mobile：13316929948（同V）
Email：James@longstartech.com.cn
Contact Person :James
QL80T4H-A/B/C/D/E-Y
Part Name：QL80T4H-A/B/C/D/E-Y 808nm 1W QSI Laser Diode
Part No：QL80T4H-A/B/C/D/E-Y
Wavelength：808nm
IOP：250mA
Optical Power：1W
Part Package：TO-5 (φ9mm)
- 固态激光激发 - 医疗用途 - 物质过程 - 测量 - 舞台灯光 Solid state laser excitation - medical use - material process - Measurement - stage lighting
SPECIFICATION： Know
♦OVERVIEW
QL80T4H-A/B/C/D/E-Y is a MOCVD grown 808nm band laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 1W for optoelectronic devices
such as solid state laser pumping and medical use.
♦APPLICATION
- Solid state laser excitation
- Medical use
- Material processes
- Measurement
♦FEATURES
- Optical Output Power : 1W CW
- Package Type : TO-5 (φ 9mm)
- Polarization : TM ( Electric Field Perpendicular to the Junction Plane )
